Specification    

Purity,% 99.999 99.9999
Oxygen ≤1.0 ppmv ≤ 40 ppbv
Nitrogen ≤2.0 ppmv ≤ 250 ppbv
Carbon dioxide ≤ 0.5ppmv ≤ 40 ppbv
Carbon monoxide ≤ 0.1ppmv ≤ 10ppbv
Moisture ≤ 0.5 ppmv ≤ 350 ppbv
C1-C2 ≤ 2.0 ppmv ≤ 500 ppbv
Germane
≤ 50 ppbv
Hydrogen sulfide
≤ 50 ppbv

transportation    

DOT Shipping name Arsine
DOT classification 2.3 (2.1) Toxic gas
DOT label Toxic gas/respiratory hazard, flammable gas
UN NO. UN 2188
CAS No. 7784-42-1
CGA/DISS/JIS 350/632/W22-14L
Transportation status Liquefied gas

Technical Information    

Cylinder condition @ 21.1°C liquid
Combustion limit in air 5.1-78%
Natural temperature (°C)-
Molecular weight (g/mol) 77.95
Specific gravity (air =1) 2.695
Critical temperature (°C) 99.85
Critical temperature (psig) 985.3

Application

1. In semiconductor manufacturing, arsine is an n-type dopant for epitaxial silicon (usually mixed with hydrogen).
2. For the doped selected area of ??the silicon wafer, use deposition/diffusion technology to form shallow structures, such as emitters or source-drain contacts (usually ppm to percentage levels, nitrogen is the balance gas).
3. Using ion implantation, doping in selected areas (usually mixed with hydrogen).
4. Participate in many chemical reactions.